Multi-layer composite backplate for micromechanical microphone

ABSTRACT

Backplates for MEMS devices. In one embodiment, the backplate includes an interconnect layer, a first layer, a second layer and a plurality of openings. The interconnect layer includes a first side and a second side that is opposite from the first side. The first layer is coupled to the first side of the interconnect layer. The second layer is coupled to the second side of the interconnect layer. The plurality of openings are located between a first side of the backplate and a second side of the backplate.

RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No. 14/894,390, entitled “MULTI-LAYER COMPOSITE BACKPLATE FOR MICROMECHANICAL MICROPHONE” filed Nov. 27, 2015, which is incorporated herein by reference in its entirety. U.S. patent application Ser. No. 14/894,390 is a 371 application of International Application No. PCT/2014/039793, entitled “MULTI-LAYER COMPOSITE BACKPLATE FOR MICROMECHANICAL MICROPHONE” filed May 28, 2014, the entire contents of which is also incorporated herein by reference. International Application No. PCT/2014/039793 claims priority to U.S. Provisional Application No. 61/827,982, entitled “MULTI-LAYER COMPOSITE BACKPLATE FOR MICROMECHANICAL MICROPHONE” filed May 28, 2013, the entire contents of which is also incorporated herein by reference.

BACKGROUND

The present disclosure relates to micromechanical systems (“MEMS”), such as, for example, MEMS microphone systems.

SUMMARY

One embodiment provides a backplate for a MEMS device. In one embodiment, the backplate includes an interconnect layer, a first layer, a second layer and a plurality of openings. The interconnect layer includes a first side and a second side that is opposite from the first side. The first layer is coupled to the first side of the interconnect layer. The second layer is coupled to the second side of the interconnect layer. The plurality of openings are located between a first side of the backplate and a second side of the backplate.

Another embodiment provides a backplate for a MEMS device. In one embodiment, the backplate includes a plurality of openings, a first layer, a second layer, and an interconnect layer. The interconnect layer is positioned between the first layer and the second layer. The interconnect layer couples the first layer to the second layer.

Yet another embodiment provides a backplate for a MEMS device. In one embodiment, the backplate includes a plurality of openings, a first layer, and an interconnect layer. The interconnect layer is coupled to the first layer. The interconnect layer includes a first portion and a second portion. The second portion is positioned between the first portion and the first layer. A width of the second portion is different than a width of the first portion.

Still another embodiment provides a MEMS microphone system. The system includes a membrane and a perforated counter electrode opposite the membrane, also referred to as a backplate regardless of position relative to the membrane. The backplate includes multiple thin layers of varying materials which are stacked to produce a rigid, strong, and flat backplate. Thick MEMS layers are prone to stress gradients which cause curvature, but by alternating thin layers of different materials it is possible to minimize backplate curvature. Additionally, through a composite layered backplate, it is possible to combine tensile material layers with compressive material layers to adjust the amount of net tension in the backplate affecting the strength and rigidity of the backplate. Thin layers can also be more easily patterned to tighter tolerances. In particular, one embodiment of the disclosure related to CMOS MEMS provides a backplate including an upper metal layer and a lower metal layer with similar embodiments related to traditional MEMS using other material layers. An interconnect layer connects the two metal layers. The interconnect layer can have a smaller width than the metal layers and can be constructed from a different metal (e.g., tungsten). The interconnect layer can be constructed of multiple materials including using a sacrificial material (e.g. silicon dioxide) encapsulated by another material or combination of materials. In one embodiment, an upper layer is used to encapsulate and protect an unetched but otherwise sacrificial interconnect layer. The upper and lower layers may each also be constructed with different widths, different thicknesses, and different opening sizes with respect to each other. A person skilled in the art would know that the structures described herein are made by known methods such as depositing layers and patterning them.

Yet another embodiment provides a MEMS device. In one embodiment, the MEMS device includes a membrane, and a reinforced backplate having a plurality of openings. The reinforced backplate include a first layer, and a second layer coupled to the first layer.

Other aspects of the disclosure will become apparent by consideration of the detailed description and accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross-sectional view of a portion of a MEMS microphone system.

FIG. 2 is side, cross-sectional view of a composite backplate.

FIGS. 3a and 3b are side, cross-sectional views of alternative constructions of a composite backplate.

FIGS. 4a and 4b are top, plan views of a composite backplate including an interconnect layer composed of discrete posts.

FIG. 4c is a top, plan view of a composite backplate including an interconnect layer composed of a continuous wall.

FIG. 4d is a top, plan view of a composite backplate including an interconnect layer composed of individual continuous walls surrounding each backplate opening.

FIGS. 5a-c are side, cross-sectional views of alternative configurations of a composite backplate.

DETAILED DESCRIPTION

Before any embodiments of the disclosure are explained in detail, it is to be understood that the disclosure is not limited in its application to the details of construction and the arrangement of components set forth in the following description or illustrated in the following drawings. The disclosure is capable of other embodiments and of being practiced or of being carried out in various ways.

FIG. 1 is a side, cross-sectional view of a portion of a MEMS microphone system 100. As described in further detail below, the system includes a membrane 102 that moves in response to acoustic pressures and a counter electrode opposite the membrane (referred to as a backplate) 104. An electrical circuit detects movement of the membrane 102 relative to the backplate 104 (e.g., due to varying capacitance) and generates an electrical signal indicative of the acoustic pressure (i.e., sound). CMOS and/or ASIC components (e.g., integrated with the system 100 or external to the system 100) process the electrical signal. As illustrated in

FIG. 1, the backplate 104 can include holes or vents 106 that allow air to pass between the membrane 102 and the backplate 104. For optimal performance and durability, the backplate needs a balance between size and strength. For example, a thick backplate provides robust strength but reduces the acoustic noise performance of the system 100. Similarly, a thin or highly perforated backplate may not provide adequate strength and may not provide adequate particle filtration. By using a composite construction of thin material layers, as show in FIG. 2, it is also possible to pattern thinner web sections between vent holes allowing for the placement of more and potentially smaller vent holes 106 in the backplate. Furthermore, the design of the backplate, including both the thickness of the backplate and the size and number of vent hole openings 106, impacts the microphone capacitance and sensitivity and impacts the acoustic signal-to-noise ratio of the system. Therefore, the design of the backplate impacts the performance of the system 100.

FIG. 2 is a cross-sectional view of the backplate 104 in more detail. As illustrated in FIG. 2, for one embodiment of this disclosure, the backplate 104 includes an upper metal layer 200 a and a lower metal layer 200 b. An interconnect layer 200 c connects the upper layer 200 a and the lower layer 200 b. Each of the upper and lower metal layers can include a composite stack of different metals. For example, in one embodiment related to CMOS MEMS, at least one of the upper and lower layers 200 a and 200 b are composed of a stack of the following layers: titanium nitride, titanium, aluminum copper, titanium, and titanium nitride. Also, in some embodiments, at least one of the layers 200 a, 200 b, and 200 c is formed out of an insulator rather than metal. Accordingly, in general, the composite backplate 104 can include conductive or insulating upper and lower layers 200 a and 200 b and a conductive or insulating interconnect layer 200 c.

The vertical interconnect layer 200 c can be constructed of a different material than the upper and lower layers 200 a and 200 b, such as a standard CMOS via material layer such as tungsten. In some embodiments, as illustrated in FIG. 2, the interconnect layer 200 c has a smaller width than the upper layer 200 a and/or the lower layer 200 b. Also, in some embodiments, each layer has a different width. Furthermore, in an additional embodiment, the interconnect material 200 c is removed so that the upper layer 200 a connects directly to the lower layer 200 b.

In addition, as illustrated in FIG. 2, additional layers can be added to the backplate 104. For example, as illustrated in phantom, another interconnect layer 200 c and another upper metal layer 200 a can be added to the backplate. Similarly, as illustrated in FIGS. 3a and 3b , in some embodiments, only one of the upper and lower layers 200 a and 200 b are used in the backplate 104 where no metal (or insulator) layer is present above or below the interconnect layer 200 c.

The interconnect layer 200 c can be provided as discrete connections (e.g. as intermittent linear segments or circular posts) or as a continuous wall. For example, FIG. 4a is a top, plan view of the backplate 104 where the interconnect layer 200 c is formed to create posts 300 positioned between the holes 106. As illustrated in FIG. 4a , the posts 300 can be solid. In other embodiments, as illustrated in FIG. 4b , the posts 300 can be constructed as a ring wall that surrounds a core 302 (e.g., an oxide core). The core 302 can contain one or more materials or can be hollow. Although the posts 300 are illustrated in FIGS. 4a and 4b as being circular, it should be understood that the posts 300 can have any desired shape, such as triangular, square, polygonal, etc., and any size.

In some embodiments, rather than being constructed as discrete posts 300, the interconnect layer 200 c can be constructed as walls. For example, FIG. 4c is a top, plan view of the backplate 104 where the interconnect layer 200 c consists of a single continuous wall 304 between the holes 106. Although the walls 304 are illustrated in FIG. 4c as continuous straight walls, the walls 304 can be continuous or intermittent and straight or curved and can include one or more multiple walls (e.g., two parallel walls encapsulating a region between the walls that can be hollow or filled with one or more materials). FIG. 4d is a top, plan view of the backplate 104 where the interconnect layer 200 c is constructed of multiple materials including one material used to form a plurality of continuous walls surrounding the backplate perimeter and each backplate opening in order to encapsulate and protect a second interconnect layer material in a region interior to the walls.

FIGS. 5a-c illustrate additional alternative constructions for the composite backplate 104. In particular, FIG. 5a illustrates a composite backplate 104 including an interconnect layer 200 c having a double wall 304 (see FIG. 4c ) or discrete ring posts 300 (see FIGS. 4a and 4b ). The wall 304 or ring posts 300 protect a core 310 that can be filled with a different material than the interconnect layer 200 c, such as silicon dioxide. In other embodiments, the core 310 can be hollow. An optional release hole 312 can be formed in the upper layer 200 a. The release hole 312 allows removal of material to create a core 310 that is hollow. It should be understood that the release hole 312 can alternatively or in addition be included in the lower layer 200 b.

FIG. 5b illustrates an alternative backplate 104 that includes an interconnect layer 200 c (e.g., formed as either walls 304 or posts) where an upper portion of layer 200 c is wider or has a different shape than the lower portion. For example, in some embodiments, as illustrated in FIG. 5 b, the upper portion of the layer 200 c matches a shape or size of the upper layer 200 a. Forming the interconnect layer 200 c in this fashion stiffens and provide more support to the upper layer 200 a. It should be understood that the constructions of the interconnect layer 200 c illustrated in FIG. 5b can alternatively or in addition be used with the lower layer 200 b.

A similar construction of the interconnect layer 200 c can also be used with no upper layer 200 a to form the backplate 104 (see FIG. 5c ). As previously noted, forming the interconnect layer 200 c as illustrated in FIG. 5c stiffens and provides support to the backplate 104 (e.g., the lower layer 200 b). It should be understood that the constructions of the interconnect layer 200 c illustrated in FIG. 5c can alternatively or in addition be used when the backplate 104 does not include a lower layer 200 b.

Thus, embodiments of the disclosure provide, among other things, a composite backplate that is thin and highly perforated yet strong and flat with adequate tensile properties. The composite backplate can also provide better particle filtration with less reduction of acoustic signal-to-noise ratio than existing backplates. It should be understood that the same patterns can be used as a front plate in a MEMS system. Also, the backplate (or frontplate) of this construction can be formed using CMOS MEMS material layers or traditional MEMS material layers and processing steps. 

What is claimed is:
 1. A backplate for a MEMS device, the backplate comprising: an interconnect layer including a first side and a second side opposite the first side; a first layer coupled to the first side of the interconnect layer; a second layer coupled to the second side of the interconnect layer; and a plurality of openings located between a first side of the backplate and a second side of the backplate.
 2. The backplate of claim 1, wherein the interconnect layer includes a plurality of discrete posts.
 3. The backplate of claim 2, wherein the each of the plurality of discrete posts has a shape selected from a group consisting of circular, triangular, square, and polygonal.
 4. The backplate of claim 2, wherein each of the plurality of discrete posts includes a core and a ring wall surrounding the core.
 5. The backplate of claim 4, wherein the core includes an oxide core.
 6. The backplate of claim 1, wherein the first layer or the second layer is an electrically conductive material, and wherein the interconnect layer is an electrically insulating material.
 7. The backplate of claim 1, wherein the first layer or the second layer is an electrically insulating material, and wherein the interconnect layer is an electrically conductive material.
 8. A backplate for a MEMS device, the backplate comprising: a plurality of openings; a first layer; a second layer; and an interconnect layer positioned between the first layer and the second layer, the interconnect layer coupling the first layer to the second layer.
 9. The backplate of claim 8, wherein the interconnect layer includes two walls extending from the first layer to the second layer, and a region positioned between the two walls and extending from the first layer to the second layer.
 10. The backplate of claim 9, wherein the first layer or the second layer includes a release hole that is positioned adjacent to the region.
 11. The backplate of claim 9, wherein the region is hollow.
 12. The backplate of claim 9, wherein the two walls are constructed of a first material, and wherein the region is constructed of a second material.
 13. The backplate of claim 8, wherein the interconnect layer includes a plurality of discrete posts, and wherein each of the plurality of discrete posts includes a core and a ring wall surrounding the core.
 14. The backplate of claim 13, wherein the first layer or the second layer includes a release hole that is positioned adjacent to the core.
 15. A backplate for a MEMS device, the backplate comprising: a plurality of openings; a first layer; and an interconnect layer coupled to the first layer and including a first portion, and a second portion positioned between the first portion and the first layer, wherein a width of the second portion is different than a width of the first portion.
 16. The backplate of claim 15, wherein a width of the first layer is equal to the width of the first portion.
 17. The backplate of claim 15, wherein the interconnect layer is constructed of a different material than the first layer.
 18. The backplate of claim 15, wherein the first layer is constructed of an electrically conductive material, and wherein the interconnect layer is constructed of an electrically insulating material. 